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2222A 100AX RT2210B7 24010 SEF206A D5NE1 RN2415 0505Y
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  ds30038 rev. a - preliminary 1 of 2 byv27/50 / byv27/200 www.d iodes.com  diodes incorporated features byv27/50 - byv27/200 2.0a super-fast glass body rectifier a a b c d sod-57 dim min max a 26.0  b  4.2 c  0.82 d  3.6 all dimensions in mm mechanical data  case: sod-57, glass  terminals: plated leads solderable per mil-std-202, method 208  polarity: cathode band  weight: 0.50 grams (approx.)  mounting position: any  marking: type number maximum ratings and electrical characteristics @t j = 25  c unless otherwise specified characteristic sy mbol byv27/50 byv27/100 byv27/150 byv27/200 unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 50 100 150 200 v rms reverse voltage v r(rms) 35 70 100 140 v non-repetitive peak reverse voltage v rsm 55 110 165 220 v average rectified output current (note 1) i o 2.0 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 50 a repetitive forward surge current i frm 15 a forward voltage @ i f = 5.0a v fm 1.1 v peak reverse current @ t j = 25  c at rated dc blocking voltage @ t j = 165  c i rm 1.0 150  a non-repetitive reverse avalanche energy i r = 0.6a inductive load @ t j = 175  c e rsm 20 mj reverse recovery time (note 2) t rr 25 ns typical thermal resistance junction to ambient (note 1) r  ja 45 k/w operating and storage temperature range t j, t stg -65 to +175  c notes: 1.leads maintained at ambient temperature at a distance of 10mm from the case. 2. measured with i f = 0.5a, i r = 1.0a, i rr = 0.25a. see figure 4.  hermetically sealed glass body construction  controlled avalanche characteristics  super-fast switching for high efficiency  high current capability and low forward voltage drop  surge overload rating to 50a peak  low reverse leakage current
ds30038 rev. a - preliminary 2 of 2 byv27/50 / byv27/200 www.d iodes.com 0 1 2 3 4 02550 75 100 125 150 175 i , average fwd rectified current (a) (av) t , ambient temperature ( c) a fi g . 1 forward current deratin g curve single phase half wave resistive or inductive load 0.1 1 10 100 0.01 0 i , instantaneous fwd current (a) f v , instantaneous forward voltage (v) f fi g .2 t y pical forward characteristics t = 25 c j 0.6 1.2 1.8 2.4 3.0 0.1 1 10 100 1000 0 t , junction temperature ( c) j fi g .3 t y pical reverse characteristics v = v rrrm 40 80 120 160 200 50v dc approx 50 w ni 50 w ni 1.0 w ni oscilloscope (note 1) pulse generator (note 2) device under te s t t rr set time base for 50/100 ns/cm +0.5a 0 -0.25a -1.0a notes: 1. rise time = 7.0ns max. input impedance = 1.0m w ,22pf. 2. rise time = 10ns max. input impedance = 50 w . fig. 4 reverse recovery time characteristic and test circuit (+) (+) (-) (-)


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